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Applied Physics Letters

Volumn 100, Issue 25, 2012, Pages

Fabrication of solution-processed hydrogenated amorphous silicon single-junction solar cells

(5) Masuda, Takashi a Sotani, Naoya b Hamada, Hiroki b,e Matsuki, Yasuo a,c Shimoda, Tatsuya a,d

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b SANYO ELECTRIC CO LTD (Japan)

c JSR CORPORATION (Japan)

d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

e PANASONIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ILLUMINATION CONDITIONS; NON-DOPED; P-I-N JUNCTIONS; POWER CONVERSION EFFICIENCIES; SILICON FILMS; SILICON LAYER; SINGLE JUNCTION SOLAR CELLS; SOLUTION-PROCESSED; SPIN DENSITIES; VACUUM CONDITION;

AMORPHOUS SILICON; CONVERSION EFFICIENCY; HYDROGEN; HYDROGENATION; METALLIC FILMS;

ELECTRIC PROPERTIES;

EID: 84863335738 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4730614 Document Type: Article

Times cited : (52)

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