Thermally stimulated conductivity of Cu 3BiS 3 thin films deposited by co-evaporation: Determination of trap parameters related to defects in the gap

Journal of Materials Science

Volumn 47, Issue 18, 2012, Pages 6688-6692

  Dussan, A ^a   Murillo, J M ^a   Mesa, F ^b  

^a UNIVERSIDAD NACIONAL DE COLOMBIA   (Colombia)

^b UNIVERSIDAD LIBRE   (Colombia)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS METHOD; AS-GROWN; CO-EVAPORATIONS; CURRENT CURVE; HIGH TEMPERATURE; PREPARATION PROCESS; ROOM TEMPERATURE; STRUCTURAL DEFECT; SULFUR ATMOSPHERE; TEMPERATURE RANGE; THERMAL POWER MEASUREMENTS; THERMALLY STIMULATED CONDUCTIVITY; THERMALLY STIMULATED CURRENT; TRANSPORT MECHANISM; TRAP PARAMETERS; TRAPPING CENTERS; TRAPPING LEVELS; TWO-STAGE PROCESS;

CRYSTAL IMPURITIES; ELECTRIC PROPERTIES; THIN FILMS;

DEFECTS;

EID: 84864770715     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-012-6610-0     Document Type: Article

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