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Volumn 344, Issue 1-4, 2004, Pages 249-254
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Trapping center parameters of TlGaSe2 layered crystals
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Author keywords
Chalcogenides; Defects; Electrical properties; Semiconductors
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Indexed keywords
ACTIVATION ENERGY;
CRYSTAL GROWTH;
CRYSTAL LATTICES;
DEFECTS;
ELECTRIC PROPERTIES;
PHOTONS;
PHOTOSENSITIVITY;
SEMICONDUCTOR MATERIALS;
SINGLE CRYSTALS;
SPECTROSCOPY;
CHALCOGENIDES;
GAP GEOMETRY;
THALLIUM COMPOUNDS;
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EID: 0742285665
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2003.09.266 Document Type: Article |
Times cited : (23)
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References (20)
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