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Volumn 344, Issue 1-4, 2004, Pages 249-254

Trapping center parameters of TlGaSe2 layered crystals

Author keywords

Chalcogenides; Defects; Electrical properties; Semiconductors

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; CRYSTAL LATTICES; DEFECTS; ELECTRIC PROPERTIES; PHOTONS; PHOTOSENSITIVITY; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SPECTROSCOPY;

EID: 0742285665     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.266     Document Type: Article
Times cited : (23)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.