Density of states in the gap of microcrystalline silicon determined from thermally-stimulated currents

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6844-6847

  Souffi, N ^a   Bauer, G H ^a   Main, C ^b   Reynolds, S ^b   Bruggemann R ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b UNIVERSITY OF DUNDEE   (United Kingdom)

Author keywords

Defect; Electrical and electronic properties; Microcrystalline silicon; Thermally stimulated currents

Indexed keywords

DOS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; GALLIUM ALLOYS; NONMETALS; NUMERICAL METHODS; SILICON;

(001) PARAMETER; (100) SILICON; BAND TAILS; CONDUCTION BAND EDGE (CBE); DENSITY OF STATES (DOF); ELSEVIER (CO); IN ORDER; NUMERICAL SOLUTIONS; RATE EQUATIONS; RETRAPPING; SIMULATION APPROACH;

MICROCRYSTALLINE SILICON;

EID: 45849139390     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.044     Document Type: Article

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