Correlation between surface chemistry, density, and band gap in nanocrystalline WO 3 thin films

ACS Applied Materials and Interfaces

Volumn 4, Issue 3, 2012, Pages 1371-1377

  Vemuri, R S ^a,b,c   Engelhard, M H ^c   Ramana, C V ^a,b  

^a 500 W University Avenue   (United States)

^b UNIVERSITY OF TEXAS AT EL PASO   (United States)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

band gap; optical properties; spectrophotometry; surface chemistry; WO 3 thin films; X ray reflectivity; XPS density

Indexed keywords

ATOMIC FORCE MICROSCOPIES (AFM); EXCESS OXYGEN; FILM DENSITY; NANOCRYSTALLINES; OVER-STOICHIOMETRIC; OXYGEN CONCENTRATIONS; OXYGEN CONTENT; PHYSICAL CHARACTERISTICS; REACTIVE GAS MIXTURES; SCANNING ELECTRON MICROSCOPIES (SEM); SPECTRAL TRANSMISSION; SPECTROPHOTOMETRIC MEASUREMENTS; SPUTTERING GAS; SUBSTRATE MODELING; VALENCE STATE; X RAY PHOTOELECTRON SPECTROSCOPIES (XPS); X-RAY REFLECTIVITY; XPS ANALYSIS;

ARGON; ATOMIC FORCE MICROSCOPY; ENERGY GAP; GAS MIXTURES; OPTICAL PROPERTIES; OXYGEN; PHASE INTERFACES; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SPECTROPHOTOMETRY; SURFACE CHEMISTRY; THIN FILMS; TUNGSTEN; X RAY PHOTOELECTRON SPECTROSCOPY;

VAPOR DEPOSITION;

EID: 84859112409     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am2016409     Document Type: Article

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