Effect of lattice misfit on the transition temperature of VO 2 thin film

Journal of Materials Science

Volumn 47, Issue 17, 2012, Pages 6397-6401

  Koo, Hyun ^a   Yoon, Sejin ^a   Kwon, O Jong ^a   Ko, Kyeong Eun ^a   Shin, Dongmin ^a   Bae, Sung Hwan ^a   Chang, Se Hong ^b   Park, Chan ^a  

^a Seoul National University   (South Korea)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION CONDITIONS; LATTICE MISFITS; MGO; PREFERRED ORIENTATIONS; VANADIUM DIOXIDE THIN FILMS;

DEPOSITION; EPITAXIAL GROWTH; FILM THICKNESS; PULSED LASER DEPOSITION; SAPPHIRE; TEMPERATURE; THIN FILMS; VANADIUM;

VAPOR DEPOSITION;

EID: 84864449648     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-012-6565-1     Document Type: Article

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