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Volumn , Issue , 2011, Pages 221-225
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High temperature reliability investigations of EEPROM memory cells realised in silicon-on-insulator (SOI) technology
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Author keywords
Data retention; EEPROM; Endurance; High temperature; Reliability; SOI
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Indexed keywords
DATA RETENTION;
EEPROM;
ELECTROMIGRATION RELIABILITY;
HIGH TEMPERATURE;
HIGH-TEMPERATURE ELECTRONICS;
MICROELECTRONIC MANUFACTURING;
SILICONON-INSULATOR TECHNOLOGY (SOI);
SOI;
CMOS INTEGRATED CIRCUITS;
DURABILITY;
HIGH TEMPERATURE APPLICATIONS;
MICROELECTRONICS;
SILICON WAFERS;
RELIABILITY;
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EID: 84864443475
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (12)
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References (10)
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