Epitaxial growth of Nb-doped SrTiO 3 films by pulsed laser deposition

Applied Surface Science

Volumn 258, Issue 23, 2012, Pages 9496-9500

  Markovich, M ^a   Roqueta, J ^b   Santiso, J ^b   Lakin, E ^a   Zolotoyabko, E ^a   Rothschild, A ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

Author keywords

Defects; Pulsed laser deposition (PLD); Reciprocal space map (RSM); Strain

Indexed keywords

CONDUCTIVE FILMS; CRYSTAL STRUCTURE; DEFECTS; DOPING (ADDITIVES); EPITAXIAL FILMS; FILM GROWTH; NIOBIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; POINT DEFECTS; PULSED LASER DEPOSITION; PULSED LASERS; SINGLE CRYSTALS; STRAIN; STRAIN RELAXATION; STRONTIUM TITANATES; SUBSTRATES; TITANIUM COMPOUNDS; TRANSPARENT CONDUCTING OXIDES; TRANSPARENT ELECTRODES; X RAY DIFFRACTION;

COMPLEMENTARY MECHANISMS; HIGH RESOLUTION X RAY DIFFRACTION; HOMOGENEOUS CONCENTRATION; RECIPROCAL SPACE MAPS; SINGLE CRYSTAL SUBSTRATES; STRAINED EPITAXIAL FILMS; STRUCTURAL INHOMOGENEITIES; TRANSPARENT CONDUCTING OXIDE ELECTRODES;

EPITAXIAL GROWTH;

EID: 84864448577     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.02.041     Document Type: Conference Paper

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