Defect chemistry of pn junctions in complex oxides

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 24, 2010, Pages

  Saraf, Shimon ^a   Markovich, Miri ^a   Rothschild, Avner ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78651263848     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.245208     Document Type: Article

References (41)

1. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003). 10.1126/science. 1080615
2. A. Ohtomo and H. Y. Hwang, Nature (London) 427, 423 (2004). 10.1038/nature02308
3. S. Thiel, G. Hammerl, A. Schmehl, C. W. Schneider, and J. Mannhart, Science 313, 1942 (2006). 10.1126/science.1131091
4. A. Brinkman, M. Huijben, M. van Zalk, J. Huijben, U. Zeitler, J. C. Maan, W. G. van der Wiel, G. Rijnders, D. H. A. Blank, and H. Hilgenkamp, Nature Mater. 6, 493 (2007). 10.1038/nmat1931
5. D. G. Schlom, L.-Q. Chen, X. Pan, A. Schmehl, and M. A. Zurbuchen, J. Am. Ceram. Soc. 91, 2429 (2008). 10.1111/j.1551-2916.2008.02556.x
6. S. A. Chambers, Adv. Mater. 22, 219 (2010). 10.1002/adma.200901867
7. S. B. Ogale, Thin Films and Heterostructures for Oxide Electronics (Springer, New York, 2005).
8. R. A. De Souza, J. Fleig, R. Merkle, and J. Maier, Z. Metallkd. 94, 218 (2003).
9. Q. L. Zhou, K. J. Jin, H. B. Lu, P. Han, Z. H. Chen, K. Zhao, Y. L. Zhou, and G. Z. Yang, Europhys. Lett. 71, 283 (2005). 10.1209/epl/i2005-10084-4
10. P. Han, K. J. Jin, H. B. Lu, Q. L. Zhou, Y. L. Zhou, and G. Z. Yang, Appl. Phys. Lett. 91, 182102 (2007). 10.1063/1.2804608
11. H. L. Tuller, J. Phys. Chem. Solids 55, 1393 (1994). 10.1016/0022- 3697(94)90566-5
12. M. V. Raymond and D. M. Smyth, J. Phys. Chem. Solids 57, 1507 (1996). 10.1016/0022-3697(96)00020-0
13. J. Maier, Phys. Chem. Chem. Phys. 5, 2164 (2003). 10.1039/b300139n
14. Y. Tsur and I. Riess, Phys. Rev. B 60, 8138 (1999). 10.1103/PhysRevB.60. 8138
15. R. Waser, J. Am. Ceram. Soc. 74, 1934 (1991). 10.1111/j.1151-2916.1991. tb07812.x
16. R. Moos and K. H. Härdtl, J. Am. Ceram. Soc. 80, 2549 (1997). 10.1111/j.1151-2916.1997.tb03157.x
17. J. Blanc and D. L. Staebler, Phys. Rev. B 4, 3548 (1971). 10.1103/PhysRevB.4.3548
18. R. Waser, T. Baiatu, and K. H. Härdtl, J. Am. Ceram. Soc. 73, 1645 (1990). 10.1111/j.1151-2916.1990.tb09809.x
19. T. Menke, R. Dittmann, P. Meuffels, K. Szot, and R. Waser, J. Appl. Phys. 106, 114507 (2009). 10.1063/1.3267485
20. I. Riess, Phys. Rev. B 35, 5740 (1987). 10.1103/PhysRevB.35.5740
21. J. F. Guillemoles, I. Lubomirsky, I. Riess, and D. Cahen, J. Phys. Chem. 99, 14486 (1995). 10.1021/j100039a041
22. D. Cahen and L. Chernyak, Adv. Mater. 9, 861 (1997). 10.1002/adma. 19970091104
23. R. Merkle and J. Maier, Angew. Chem., Int. Ed. 47, 3874 (2008). 10.1002/anie.200700987
24. H. I. Yoo and C. E. Lee, J. Am. Ceram. Soc. 88, 617 (2005). 10.1111/j.1551-2916.2005.00123.x
25. K. Gömann, G. Borchardt, and E. A. M. Schulz, Phys. Chem. Chem. Phys. 7, 2053 (2005). 10.1039/b418824a
26. S. Koerfer, R. A. De-Souza, H. I. Yoo, and M. Martin, Solid State Sci. 10, 725 (2008). 10.1016/j.solidstatesciences.2007.06.017
27. F. J. Morin and J. R. Oliver, Phys. Rev. B 8, 5847 (1973). 10.1103/PhysRevB.8.5847
28. R. Moos and K. H. Härdtl, J. Am. Ceram. Soc. 78, 2569 (1995). 10.1111/j.1151-2916.1995.tb08707.x
29. P. Blennow, A. Hagen, K. K. Hansen, L. R. Wallenberg, and M. Mogensen, Solid State Ionics 179, 2047 (2008). 10.1016/j.ssi.2008.06.023
30. In order to make sure that ignoring the strontium vacancies does not result in significant errors in our calculations we introduced a fixed concentration of 5 × 10 16 cm ⊃- 3 of fully ionized strontium vacancies, V Sr / /, and repeated the calculations. The built-in potential changed by less than 1 mV for both the HT and LT states.
31. G. M. Choi and H. L. Tuller, J. Am. Ceram. Soc. 71, 201 (1988). 10.1111/j.1151-2916.1988.tb05848.x
32. I. Denk, W. Münch, and J. Maier, J. Am. Ceram. Soc. 78, 3265 (1995). 10.1111/j.1151-2916.1995.tb07963.x
33. Kröger-Vink notation is used throughout the text to describe defects.
34. R. F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley, USA, 1996).
35. J. Maier, Physical Chemistry of Ionic Materials: Ions and Electrons in Solids (Wiley, West Sussex, England, 2004). 10.1002/0470020229
36. 2.
37. S. Selberher, Analysis and Simulation of Semiconductor Devices (Springer-Verlag, New York, 1984).
38. The space charge region width is taken as the distance between the two points on each side of the junction where the electric field drops to 1% of its maximum value.
39. M. L. Liu, J. Electrochem. Soc. 144, 1813 (1997). 10.1149/1.1837685
40. I. Riess, Solid State Ionics 157, 1 (2003). 10.1016/S0167-2738(02)00182-0
41. K. Sasaki and J. Maier, J. Appl. Phys. 86, 5422 (1999). 10.1063/1.371541