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Volumn 7, Issue , 2012, Pages

Pore formation in p-type silicon in solutions containing different types of alcohol

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; FLUORINE COMPOUNDS; HYDROFLUORIC ACID;

EID: 84863992584     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-329     Document Type: Article
Times cited : (16)

References (12)
  • 1
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    • Etch channel formation during anodic dissolution of n-type silicon in aqueous hydrofluoric acid
    • Theunissen MJJ: Etch channel formation during anodic dissolution of n-type silicon in aqueous hydrofluoric acid. J Electrochem Soc 1972, 119:351-360.
    • (1972) J Electrochem Soc , vol.119 , pp. 351-360
    • Theunissen, M.J.J.1
  • 2
    • 0028419503 scopus 로고
    • The electrochemical oxidation of silicon and formation of porous Siin acetonitrile
    • Propst EK, Kohl PA: The electrochemical oxidation of silicon and formation of porous Siin acetonitrile. J Electrochem Soc 1994, 141:1006-1013.
    • (1994) J Electrochem Soc , vol.141 , pp. 1006-1013
    • Propst, E.K.1    Kohl, P.A.2
  • 4
    • 0032123704 scopus 로고    scopus 로고
    • Macropore formation on p-type Si in fluoride containing organic electrolytes
    • Ponomarev EA, Lévy-Clément C: Macropore formation on p-type Si in fluoride containing organic electrolytes. Electrochem Solid St 1998, 1:42-45.
    • (1998) Electrochem Solid St , vol.1 , pp. 42-45
    • Ponomarev, E.A.1    Lévy-Clément, C.2
  • 5
    • 0032592421 scopus 로고    scopus 로고
    • The physics of macropore formation in low-doped p-type silicon
    • Lehmann V, Rönnebeck S: The physics of macropore formation in low-doped p-type silicon. J Electrochem Soc 1999, 146:2968-2975.
    • (1999) J Electrochem Soc , vol.146 , pp. 2968-2975
    • Lehmann, V.1    Rönnebeck, S.2
  • 7
    • 18344368456 scopus 로고    scopus 로고
    • Random macropore formation in p-type silicon in HF-containing organic solutions-host matrix for metal deposition
    • Harraz FA, Kamada K, Kobayashi K, Sakka T, Ogata YH: Random macropore formation in p-type silicon in HF-containing organic solutions-host matrix for metal deposition. J Electrochem Soc 2005, 152:C213-C220.
    • (2005) J Electrochem Soc , vol.152
    • Harraz, F.A.1    Kamada, K.2    Kobayashi, K.3    Sakka, T.4    Ogata, Y.H.5
  • 8
    • 0000245196 scopus 로고    scopus 로고
    • Dimethyl sulfoxide as a mild oxidizing agent for porous silicon and its effect on photoluminescence
    • Song JH, Sailor MJ: Dimethyl sulfoxide as a mild oxidizing agent for porous silicon and its effect on photoluminescence. Inorg Chem 1998, 37:3355-3360.
    • (1998) Inorg Chem , vol.37 , pp. 3355-3360
    • Song, J.H.1    Sailor, M.J.2
  • 9
    • 0036607281 scopus 로고    scopus 로고
    • Silicon anodization in HF ethanoic solutions- competition between pore formation and homogeneous dissolution
    • Hamm D, Sasano J, Sakka T, Ogata YH: Silicon anodization in HF ethanoic solutions- competition between pore formation and homogeneous dissolution. J Electrochem Soc 2002, 149:C331-C337.
    • (2002) J Electrochem Soc , vol.149
    • Hamm, D.1    Sasano, J.2    Sakka, T.3    Ogata, Y.H.4
  • 10
    • 0038469969 scopus 로고    scopus 로고
    • Organic and aqueous electrolytes used for etching macro- and mesoporous silicon
    • Christophersen M, Carstensen J, Voigt K, Föll H: Organic and aqueous electrolytes used for etching macro- and mesoporous silicon. Phys Status Solidi A 2003, 197:34-38.
    • (2003) Phys Status Solidi A , vol.197 , pp. 34-38
    • Christophersen, M.1    Carstensen, J.2    Voigt, K.3    Föll, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.