The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Tommila, Juha ^a   Strelow, Christian ^b   Schramm, Andreas ^a   Hakkarainen, Teemu V ^a   Dumitrescu, Mihail ^a   Kipp, Tobias ^b   Guina, Mircea ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

III V semiconductors; InAs; Molecular beam epitaxy; Nanoimprint lithography; Quantum dots; Site controlled quantum dots

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALS; NANOIMPRINT LITHOGRAPHY; NARROW BAND GAP SEMICONDUCTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM;

INAS; INAS QUANTUM DOTS; PHOTOLUMINESCENCE PROPERTIES; PLANAR SURFACE; PRE-PATTERNING; RADIATIVE RECOMBINATION RATE; SITE-CONTROLLED QUANTUM DOTS; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84863992183     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-313     Document Type: Article

References (24)

1. Waks E, Inoue K, Santori C, Fattal D, Vuckovic J, Solomon GS, Yamamoto Y: Quantum cryptography with a single photon turnstile. Nature 2002, 420:762.
2. Santori C, Fattal D, Vuckovic J, Solomon GS, Yamamoto Y: Indistinguishable photons from a single-photon device. Nature 2002, 419:594-597.
3. Knill E, Laflamme R, Milburn GJ: A scheme for efficient quantum computation with linear optics. Nature 2001, 409:46-52.
4. Michler P, Kiraz A, Becher C, Schoenfeld WV, Petroff PM, Zhang L, Hu E, Imamogùlu A: A quantum dot single-photon turnstile device. Science 2000, 290:2282-2285.
5. Schneider C, Heindel T, Huggenberger A, Niederstrasser TA, Reitzenstein S, Forchel A, Höfling S, Kamp M: Microcavity enhanced single photon emission from an electrically driven site-controlled quantum dot. Appl Phys Lett 2012, 100:091108-1-091108-4.
6. Salter CL, Stevenson RM, Farrer I, Nicoll CA, Ritchie DA, Shields AJ: An entangled-light-emitting diode. Nature 2010, 465:594-597.
7. Mohan A, Felici M, Gallo P, Dwir B, Rudra A, Faist J, Kapon E: Polarization-entangled photons produced with high-symmetry site-controlled quantum dots. Nat Photonics 2010, 4:302-306.
8. Martín-Sánchez J, Muñoz-Matutano G, Herranz J, Canet-Ferrer J, Alén B, González Y, Alonso-González P, Fuster D, González L, Martínez-Pastor J, Briones F: Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates. ACS Nano 2009, 3:1513-1517.
9. Felici M, Gallo P, Mohan A, Dwir B, Rudra A, Kapon E: Site-controlled InGaAs quantum dots with tunable emission energy. Small 2009, 5:938-943.
10. Schneider C, Strauß M, Sünner T, Huggenberger A, Wiener D, Reitzenstein S, Kamp M, Höfling S, Forchel A: Lithographic alignment to site-controlled quantum dots for device integration. Appl Phys Lett 2008, 92:183101-1-183101-3.
11. Wang Zh M, Seydmohamadi Sh, Lee JH, Salamo GJ: Surface ordering of (In, Ga)As quantum dots controlled by GaAs substrate indexes. Appl Phys Lett 2004, 85:5031-5033.
12. Lee JH, Wang Zh M, Black WT, Kunets VP, Mazur YI, Salamo GJ: Spatially localized formation of InAs quantum dots on shallow patterns regardless of crystallographic directions. Adv Funct Mater 2007, 17:3187-3193.
13. Tommila J, Tukiainen A, Viheriälä J, Schramm A, Hakkarainen TV, Aho A, Stenberg P, Dumitrescu M, Guina M: Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots. J Cryst Growth 2011, 323:183-186.
14. Balzarotti A: The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy. Nanotechnology 2008, 19:505701
15. Leon R, Fafard S: Structural and radiative evolution in quantum dots near the InxGa1-xAs/GaAs Stranski-Krastanow transformation. Phys Rev B 1998, 58:R1726-R1729.
16. Larsson LA, Larsson M, Moskalenko ES, Holtz PO: Temperature and magnetic field effects on the transport controlled charge state of a single quantum dot. Nanoscale Res Lett 2010, 5:1150-1155.
17. Cho NK, Ryu SP, Song JD, Choi WJ, Lee JI, Jeon H: Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy. Appl Phys Lett 2006, 88:133104-1-133104-3.
18. O'Donnell KP, Chen X: Temperature dependence of semiconductor band gaps. Appl Phys Lett 1991, 58:2924-2926.
19. Vurgaftman I, Meyer JR, Ram-Mohan LR: Band parameters for III-V compound semiconductors and their alloys. J Appl Phys 2001, 89:5815-5875
20. Huang YS, Qiang H, Pollak FH, Pettit GD, Kirchner PD, Woodall JM, Stragier H, Sorensen LB: Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well. J Appl Phys 1991, 70:7537-7542.
21. Ouerghui W, Melliti A, Maaref MA, Bloch J: Dependence on temperature of homogeneous broadening of InGaAs/InAs/GaAs quantum dot fundamental transitions. Physica E 2005, 28:519-524.
22. Cade NI, Gotoh H, Kamada H, Nakano H, Anantathanasarn S, Nötzel R: Optical characteristics of single InAs/InGaAsP/InP (100) quantum dots emitting at 1.55 μm. Appl Phys Lett 2006, 89:181113-1-181113-3.
23. Selçuk E, Yu Silov A, Nötzel R: Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates. Appl Phys Lett 2009, 94:263108-1-263108-3.
24. Tran T, Muller A, Shih CK, Wong PS, Balakrishnan G, Nuntawong N, Tatebayashi J, Huffaker DL: Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids. Appl Phys Lett 2007, 91:133104-1-133104-3.