Temperature and magnetic field effects on the transport controlled charge state of a single quantum dot

Nanoscale Research Letters

Volumn 5, Issue 7, 2010, Pages 1150-1155

  Larsson, L A ^a   Larsson, M ^a   Moskalenko, E S ^b   Holtz, P O ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Charge state; Magnetic field; Quantum dot; Temperature dependence; Wetting layer

Indexed keywords

CHARGE STATE; EXTERNAL MAGNETIC FIELD; HOLE TRANSPORTS; INAS/GAAS QUANTUM DOTS; MICROPHOTOLUMINESCENCE; PHOTOEXCITED CARRIERS; SINGLE QUANTUM DOT; TEMPERATURE DEPENDENCE; WETTING LAYER;

MAGNETIC FIELDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84855480677     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9618-x     Document Type: Article

References (24)

1. D. Bimberg, M. Grundmann, N.N. Ledentsov, Quantum Dot Heterostructures (Wiley, London, 1999)
2. E. Borovitskaya, M.S. Shur (eds.), Quantum dots (World Scientific, London, 2002)
3. T. Takagahara (ed.), Quantum coherence, correlation and decoherence in semiconductor nanostructures (Academic press, London, 2003)
4. T.B. Norris, K. Kim, J. Urayama, Z.K. Wu, J. Singh, P.K. Bhattacharya, J. Phys. D Appl. Phys. 38, 2077 (2005)
5. J. Urayama, T.B. Norris, H. Jiang, J. Singh, P. Bhattacharya, Appl. Phys. Lett. 80, 2162 (2002)
6. M. Grundmann, D. Bimberg, Phys. Stat. Sol. (a) 164, 297 (1997)
7. A. Vasanelli, R. Ferreira, G. Bastard, Phys. Rev. Lett. 89, 216804 (2002)
8. C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, P.H. Roussignol, J.M. Gérard, Phys. Rev. Lett. 87, 207401 (2001)
9. E.S. Moskalenko, M. Larsson, K.F. Karlsson, P.O. Holtz, B. Monemar, W.V. Schoenfeld, P.M. Petroff, Nano Lett. 7, 188 (2007)
10. E.S. Moskalenko, L.A. Larsson, M. Larsson, P.O. Holtz, W.V. Schoenfeld, P.M. Petroff, Phys. Rev. B 78, 075306 (2008)
11. E.S. Moskalenko, M. Larsson, W.V. Schoenfeld, P.M. Petroff, P.O. Holtz, Phys. Rev. B 73, 155336 (2006)
12. K.F. Karlsson, E.S. Moskalenko, P.O. Holtz, B. Monemar, W.V. Schoenfeld, J.M. Garcia, P.M. Petroff, Appl. Phys. Lett. 78, 2952 (2001)
13. D. Leonard, M. Krishnamurthy, C.M. Reaves, S.P. Denbaars, P.M. Petroff, Appl. Phys. Lett. 63, 3203 (1993)
14. R. Heitz, T.R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen, A. Madhukar, Phys. Rev. Lett. 78, 4071 (1997)
15. T.J. Krzyzewski, P.B. Joyce, G.R. Bell, T.S. Jones, Phys. Rev. B 66, 121307(R) (2002)
16. E.S. Moskalenko, V. Donchev, K.F. Karlsson, P.O. Holtz, B. Monemar, W.V. Schoenfeld, J.M. Garcia, P.M. Petroff, Phys. Rev. B 68, 155317 (2003)
17. K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann, Appl. Phys. Lett. 64, 3320 (1994)
18. K.H. Ploog, Jpn. J. Appl. Phys. 36, 4025 (1997)
19. Böer, Survey of semiconductor physics, vol. 1, 2nd edn. (Wiley, New York, 2002). table 8.4
20. N.W. Ashcroft, N.D. Mermin, Solid state physics, college edition (Thomson Learning Inc., Brooks/Cole, 1976)
21. S. Adachi, GaAs and related materials (World Scientific Publ, Singapore, 1994)
22. E.S. Moskalenko, K.F. Karlsson, P.O. Holtz, B. Monemar, W.V. Schoenfeld, J.M. Garcia, P.M. Petroff, Phys. Rev. B 64, 085302 (2001)
23. R.J. Warburton, C. Schäflein, D. Haft, F. Bickel, A. Lorke, K. Karrai, J.M. Garcia, W. Schoenfeld, P.M. Petroff, Nature 405, 926 (2000)
24. C. Schulhauser, R.J. Warburton, A. Högele, A.O. Govorov, K. Karrai, J.M. Garcia, B.D. Gerardot, P.M. Petroff, Physica E 21, 184 (2004)