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Volumn 5, Issue 8, 2009, Pages 938-943

Site-controlled InGaAs quantum dots with tunable emission energy

(6) Felici, Marco a Gallo, Pascal a Mohan, Arun a Dwir, Benjamin a Rudra, Alok a Kapon, Eli a

a EPFL (Switzerland)

Author keywords

Crystal growth; Pattern formation; Photonics; Quantum dots; Semiconductors

Indexed keywords

ADATOM FLUX; INGAAS QUANTUM DOTS; INGAAS/GAAS; INHOMOGENEOUS BROADENING; LOCAL CONTROL; NANOPHOTONIC DEVICES; OPTICAL CAVITIES; ORDERED ARRAY; ORGANOMETALLIC CHEMICAL VAPOR DEPOSITIONS; PATTERN FORMATION; QD EMISSIONS; QUANTUM DOTS; SEEDED GROWTH; SEMICONDUCTORS; SINGLE QD; SPECTRAL MATCHING; SURFACE CURVATURES; TUNABILITY; TUNABLE EMISSIONS;

CRYSTALLIZATION; EPITAXIAL GROWTH; GRAIN BOUNDARIES; NANOPHOTONICS; ORGANOMETALLICS; SEMICONDUCTOR GROWTH; SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC; GALLIUM; GALLIUM ARSENIDE; INDIUM; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; LUMINESCENCE; SURFACE PROPERTY;

ARSENIC; ARSENICALS; GALLIUM; INDIUM; LUMINESCENCE; NANOSTRUCTURES; QUANTUM DOTS; SURFACE PROPERTIES;

EID: 65649098677 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.200801274 Document Type: Article

Times cited : (79)

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