Distribution of residual stresses in boron doped p+ silicon films

Journal of the Electrochemical Society

Volumn 143, Issue 10, 1996, Pages 3389-3393

  Ning, X J ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUCKLING; DIFFUSION; DISLOCATIONS (CRYSTALS); RESIDUAL STRESSES; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; STRESS CONCENTRATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

POST DIFFUSION PROCESS; SILICON FILMS;

SEMICONDUCTING SILICON;

EID: 0030263885     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837217     Document Type: Article

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