Epitaxial growth of Ti 3SiC 2 thin films with basal planes parallel or orthogonal to the surface on α-SiC

Applied Physics Letters

Volumn 101, Issue 2, 2012, Pages

  Drevin Bazin, A ^a   Barbot, J F ^a   Alkazaz, M ^a   Cabioch, T ^a   Beaufort, M F ^a  

^a UPR 3346   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANES; CURRENT-VOLTAGE MEASUREMENTS; GROWTH MODES; SIC SUBSTRATES; STACKING SEQUENCE; THERMAL-ANNEALING;

EPITAXIAL GROWTH; SUBSTRATES; THIN FILMS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON CARBIDE;

EID: 84863979882     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737018     Document Type: Article

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