Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 6, 2012, Pages 4560-4563

  Wang, C D ^a   Jha, S K ^a   Chen, Z H ^a   Ng, T W ^a   Liu, Y K ^a   Yuen, M F ^a   Lu, Z Z ^a   Kwok, S Y ^a   J A Zapien, ^a   Bello, I ^a   Lee, C S ^a   Zhang, W J ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

BDD; P n Heterojunction; ZnO NRs

Indexed keywords

BDD; BORON-DOPED DIAMOND FILMS; CRYSTALLINITIES; ELECTRICAL CHARACTERIZATION; FORWARD VOLTAGE; GROWTH DIRECTIONS; HIGH QUALITY; IDEAL DIODES; IDEALITY FACTORS; LOW TEMPERATURES; ON/OFF RATIO; P-N HETEROJUNCTIONS; P-N JUNCTION; REVERSE LEAKAGE CURRENT; SOLUTION METHODS; ZNO; ZNO NANOROD;

ELECTRIC PROPERTIES; NANORODS; SCANNING ELECTRON MICROSCOPY; SYNTHETIC DIAMONDS; X RAY DIFFRACTION; ZINC OXIDE;

HETEROJUNCTIONS;

DIAMOND; NANOMATERIAL; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

DIAMOND; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS; ZINC OXIDE;

EID: 84863951665     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6211     Document Type: Article

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