Synthesis and structural-optical properties of ga-doped ZnO nanowires by hot-walled pulsed laser deposition method

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 5, 2012, Pages 4173-4176

  Kim, Kyoungwon ^a,b   Lee, Dong Yun ^a   Park, Dong Hoon ^a   Kim, Sangsig ^b   Lee, Sang Yeol ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

D0X Peak; GZO; HW PLD; Stacking Faults; ZnO

Indexed keywords

AU FILM; D0X PEAK; EXCITON BOUND; GA DOPANTS; GA-DOPED ZNO; GZO; HW-PLD; NANO-LOGIC; NEUTRAL DONOR; PL SPECTRA; SAPPHIRE SUBSTRATES; SINGLE-CRYSTALLINE; STRUCTURAL AND OPTICAL PROPERTIES; VAPOR-LIQUID-SOLID; WELL-ALIGNED; ZINC OXIDE (ZNO); ZNO; ZNO NWS;

GALLIUM; GALLIUM ALLOYS; GOLD; LOGIC CIRCUITS; NANOWIRES; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTOR DOPING; STACKING FAULTS; VAPORS;

ZINC OXIDE;

EID: 84863891078     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.5935     Document Type: Conference Paper

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