Intrinsic and doped zinc oxide nanowires for transparent electrode fabrication via low-temperature solution synthesis

Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 586-595

  Goris, L ^a   Noriega, R ^b   Donovan, M ^b   Jokisaari, J ^c   Kusinski, G ^c   Salleo, A ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c South   (United States)

Author keywords

Doping; Nanowire; Transparent electrode; Zinc oxide

Indexed keywords

DOPANT CONCENTRATIONS; DOPING; ENERGY DISPERSIVE X-RAY SPECTROSCOPIES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; LOW TEMPERATURES; METAL SALTS; NANOWIRE; PROCESSING CONDITIONS; SECONDARY PHASE; SINGLE-CRYSTALLINE; SOLUTION SYNTHESIS; THERMAL ANNEALING TREATMENTS; TRANSPARENT ELECTRODE; TRIOCTYLAMINE; WURTZITE LATTICES; X- RAY DIFFRACTIONS; ZINC OXIDE NANOWIRES; ZNO;

AMINES; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRIC WIRE; ELECTROCHEMICAL ELECTRODES; GALLIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; SALTS; SHEET RESISTANCE; SYNTHESIS (CHEMICAL); ZINC; ZINC OXIDE; ZINC SULFIDE;

AUGER ELECTRON SPECTROSCOPY;

EID: 61849112805     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0618-x     Document Type: Conference Paper

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