Assessing charge carrier trapping in silicon nanowires using picosecond conductivity measurements

Nano Letters

Volumn 12, Issue 7, 2012, Pages 3821-3827

  Ulbricht, Ronald ^a   Kurstjens, Rufi ^b,c   Bonn, Mischa ^a,d  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

Author keywords

defect; Silicon nanowires; solar cell; surface passivation; terahertz spectroscopy

Indexed keywords

BUILDING BLOCKES; BULK SUBSTRATES; CARRIER DIFFUSIVITY; CHARGE CARRIER TRAPPING; CONDUCTIVITY MEASUREMENTS; DIFFUSION CONSTANT; DIFFUSION PROCESS; EXCITATION DENSITY; FLUENCES; NANOWIRE SURFACE; ORDERS OF MAGNITUDE; PHOTOINJECTED CARRIERS; PICOSECOND DYNAMICS; PICOSECONDS; PROCESSING STEPS; SEMICONDUCTOR NANOWIRE; SILICON NANOWIRES; SILICON SUBSTRATES; SURFACE PASSIVATION; TANDEM SOLAR CELLS; TERAHERTZ; TRAP DENSITY;

CHARGE CARRIERS; DEFECTS; OPTOELECTRONIC DEVICES; SOLAR CELLS; SUBSTRATES; TERAHERTZ SPECTROSCOPY; TRANSPORT PROPERTIES;

NANOWIRES;

EID: 84863829237     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3017835     Document Type: Article

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