Probing ultrafast carrier dynamics in silicon nanowires

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 889-895

  Kar, Ayan ^a,b   Upadhya, Prashanth C ^a   Dayeh, Shadi A ^a   Picraux, S Tom ^a   Taylor, Antoinette J ^a   Prasankumar, Rohit P ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b University of Illinois at Chicago   (United States)

Author keywords

Nanotechnology; optical spectroscopy; semiconductor materials; silicon; ultrafast optics

Indexed keywords

CARRIER DYNAMICS; CARRIER RELAXATION; DENSITY-DEPENDENT; FEMTOSECONDS; LOCALIZED STATE; OPTICAL SPECTROSCOPY; PHOTO-INDUCED; PHOTOEXCITED CARRIERS; POLARIZATION DEPENDENCE; PROBE WAVELENGTH; PUMP FLUENCE; PUMP PROBE MEASUREMENT; PUMP-AND-PROBE; PUMP-PROBE; RELAXATION DYNAMICS; SHEDDING LIGHT; SILICON NANOWIRES; SPECTROSCOPIC MEASUREMENTS; ULTRA-FAST; ULTRAFAST CARRIER DYNAMICS; ULTRAFAST OPTICS;

CARRIER CONCENTRATION; ENERGY GAP; EXPERIMENTS; LIGHT; NANOPHOTONICS; NANOSYSTEMS; NANOWIRES; OPTICAL PUMPING; POLARIZATION; PROBES; PUMPS; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES;

DYNAMICS;

EID: 80051699730     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2076399     Document Type: Article

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