Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Zhuge, Jing ^a   Zhang, Liangliang ^a   Wang, Runsheng ^a   Huang, Ru ^a   Kim, Dong Won ^b   Park, Donggun ^b   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; NANOWIRES; RESPIRATORY MECHANICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL PROCESSING; TELEGRAPH; TRANSISTORS;

COULOMB-BLOCKADE; ELECTRICAL FIELDS; EMISSION TIME; GATE BIAS; GATE-ALL-AROUND; LARGE AMPLITUDES; METAL-OXIDE SEMICONDUCTORS; NANO WIRE STRUCTURES; OXIDE TRAPS; RANDOM TELEGRAPH SIGNAL NOISE; ROOM TEMPERATURES; SHOCKLEY-READ-HALL THEORIES; SILICON NANOWIRE TRANSISTORS; SPREAD-TIME; TIME CONSTANTS; TOP-DOWN APPROACHES;

MOSFET DEVICES;

EID: 61349149352     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089240     Document Type: Article

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