A new extraction method for the two-parameter FET temperature noise model

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 11 PART 1, 1998, Pages 1679-1685

  Garcia, Mikael ^a   Stenarson, Jörgen ^a   Yhland, Klas ^a   Zirath, Herbert ^a   Angelov, Ilcho ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Fet noise model; Nodal analysis; Noise model extraction; Source balance admittance

Indexed keywords

ELECTRIC ADMITTANCE; ELECTRIC NETWORK ANALYSIS; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL NOISE MEASUREMENT; TEMPERATURE;

NODAL ANALYSIS; NOISE MODEL EXTRACTION; SMALL SIGNAL MODEL; SOURCE BALANCE ADMITTANCE;

THERMAL NOISE;

EID: 0032205404     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.734558     Document Type: Article

References (12)

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