Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 737-742

  Ganichev, S D ^a,b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; IONIZATION;

DEEP IMPURITY CENTERS; TUNNEL IONIZATION;

SEMICONDUCTOR MATERIALS;

EID: 0033323458     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00637-7     Document Type: Article

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