Field effect transistors for terahertz imaging

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 12, 2009, Pages 2828-2833

  Knap, Wojciech ^a   Valušis, Gintaras ^b   Łusakowski, Jerzy ^c   Coquillat, Dominique ^a   Teppe, Frederic ^a   Dyakonova, Nina ^a   Nadar, Salman ^a   Karpierz, Krzysztof ^c   Bialek, Marcin ^c   Seliuta, Dalius ^b   Kašalynas, Irmantas ^b   El Fatimy, Abdel ^a  

^a UNIV MONTPELLIER   (France)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND DETECTORS; CHANNEL DIMENSION; CHANNEL LENGTH; CRYOGENIC TEMPERATURES; GATE LENGTH; IN-FIELD; NANOMETRES; NARROW BAND DETECTION; NON-LINEARITY; PLASMA RESONANCE; RESONANT FREQUENCIES; ROOM TEMPERATURE; SUBMICROMETERS; TERAHERTZ IMAGING; TERAHERTZ RANGE; THZ DETECTION; THZ RADIATION; TRANSISTOR CHANNELS; TWO-DIMENSIONAL PLASMA;

BUILDING MATERIALS; DETECTORS; ELECTRON GAS; INSULATING MATERIALS; MESFET DEVICES; MICROMETERS; NATURAL FREQUENCIES; PLASMA OSCILLATIONS; TERAHERTZ WAVES;

FIELD EFFECT TRANSISTORS;

EID: 77955464802     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982562     Document Type: Conference Paper

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