Deposition of thin films of Mg 2Si 1- xSn x solid solution by plasma-assisted co-sputtering

Journal of Alloys and Compounds

Volumn 538, Issue , 2012, Pages 73-78

  Le Quoc, H ^a,b,c   Lacoste, A ^a   Bechu S ^a   Bes A ^a   Bourgault, D ^b   Fruchart, D ^b  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c THE UNIVERSITY OF DANANG   (Viet Nam)

Author keywords

Mg 2Si Mg 2Sn solid solutions; Microwave plasma; Plasma co sputtering; Thermoelectrics; Thin films

Indexed keywords

CHEMICAL COMPOSITIONS; COSPUTTERING; ELECTRICAL CONDUCTIVITY; GAS PRESSURES; GEOMETRICAL CONFIGURATIONS; MICROWAVE PLASMA; MICROWAVE POWER; NANO-SIZE; OPERATING CONDITION; P-TYPE; PARTICLE ENERGY; POLYCRYSTALLINE THIN FILM; ROOM TEMPERATURE; STRUCTURAL CHARACTERIZATION; THERMOELECTRICS;

DEPOSITION; ELECTRIC CONDUCTIVITY; MICROSTRUCTURE; PLASMA DEPOSITION; SILICON; SOLID SOLUTIONS; THIN FILMS; TIN;

VAPOR DEPOSITION;

EID: 84863473529     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.06.003     Document Type: Article

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