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Materials Transactions

Volumn 51, Issue 5, 2010, Pages 868-871

Thermoelectric performance of p-type Mg2Si0.25Sn 0.75with Li and Ag double doping

(5) Isoda, Yukihiro a Tada, Satoki b Nagai, Takahiro b Fujiu, Hirofumi b Shinohara, Yoshikazu a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b MITSUBA Corporation (Japan)

Author keywords

Double doping; Ecofriendly semiconductor; Hot pressing method; Mg2(sisn); Thermoelectric performance

Indexed keywords

DOPED SAMPLE; DOUBLE DOPING; ECO-FRIENDLY; FLUORITE STRUCTURE; LIQUID-SOLID REACTION; MAXIMUM VALUES; MINIMUM VALUE; P-TYPE; P-VALUES; PRESSING METHODS; TEMPERATURE DIFFERENCES; THERMOELECTRIC PERFORMANCE; THERMOELECTROMOTIVE FORCES; XRD;

ENVIRONMENTAL PROTECTION; HOT PRESSING; SILVER; THERMOELECTRICITY; TIN;

DOPING (ADDITIVES);

EID: 77954021282 PISSN: 13459678 EISSN: None Source Type: Journal
DOI: 10.2320/matertrans.MH200906 Document Type: Conference Paper

Times cited : (20)

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