Thermoelectric properties of Bi-doped Mg2Si semiconductors

Physica B: Condensed Matter

Volumn 364, Issue 1-4, 2005, Pages 218-224

  Tani, Jun Ichi ^a   Kido, Hiroyasu ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

First principles calculation; Hall effect; Mg2Si; Semiconductor; Thermoelectric material

Indexed keywords

BISMUTH; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONS; HALL EFFECT; MAGNESIUM COMPOUNDS; PLASMA APPLICATIONS; SEEBECK EFFECT; SINTERING; THERMAL CONDUCTIVITY; THERMOELASTICITY;

ELECTRON CONCENTRATIONS; FIRST-PRINCIPLE CALCULATIONS; MG2SI; SEMICONDUCTOR; THERMOELECTRIC MATERIALS;

SEMICONDUCTOR MATERIALS;

EID: 20344369984     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.04.017     Document Type: Article

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