Thin films of thermoelectric compound Mg 2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

Journal of Alloys and Compounds

Volumn 509, Issue 41, 2011, Pages 9906-9911

  Le Quoc, H ^a,b   Lacoste, A ^a   Hlil, E K ^b   Bs, A ^a   Vinh, T Tan ^a   Fruchart, D ^b   Skryabina, N ^c  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b CNRS   (France)

^c PERM STATE UNIVERSITY   (Russian Federation)

Author keywords

Mg 2Sn; Plasma co sputtering; Thermoelectric; Thin films

Indexed keywords

COSPUTTERING; ELECTRICAL RESISTIVITY; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GLASS SUBSTRATES; MAXIMUM POWER FACTOR; MICROWAVE PLASMA; POLYCRYSTALLINE THIN FILM; ROOM TEMPERATURE; THERMOELECTRIC; THERMOELECTRIC APPLICATION; THERMOELECTRIC COMPOUND;

CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ENERGY DISPERSIVE SPECTROSCOPY; MAGNESIUM; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; STOICHIOMETRY; SUBSTRATES; THIN FILMS; TIN; X RAY DIFFRACTION;

SILVER;

EID: 84860394782     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.07.085     Document Type: Article

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