Thermoelectric properties and electronic structure of p-type Mg 2Si and Mg2Si0.6Ge0.4 compounds doped with Ga

Journal of Alloys and Compounds

Volumn 509, Issue 23, 2011, Pages 6503-6508

  Ihou Mouko, H ^a   Mercier, C ^a   Tobola, J ^b   Pont, G ^c   Scherrer, H ^a  

^a INSTITUT JEAN LAMOUR   (France)

^b AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

^c CNES   (France)

Author keywords

Electronic structure; Magnesium silicide; Thermoelectric properties

Indexed keywords

COHERENT POTENTIAL APPROXIMATION; DIMENSIONLESS FIGURE OF MERIT; ELECTRICAL RESISTIVITY; ELECTRONIC STRUCTURE CALCULATIONS; GA DOPING; GA-DOPED; HALL COEFFICIENT; KORRINGA-KOHN-ROSTOKER METHOD; MAGNESIUM SILICIDE; MAXIMUM VALUES; P-TYPE; P-TYPE CONDUCTIVITY; SI/GE; TEMPERATURE RANGE; THERMOELECTRIC PROPERTIES; THERMOPOWERS; VALENCE BAND EDGES;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HOT PRESSING; MAGNESIUM; SILICIDES; SILICON; TANTALUM; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

GALLIUM;

EID: 79955779572     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.03.081     Document Type: Article

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