Slab thickness effects for the clean and adsorbed Ge(001) surface with comparison to Si(001)

Journal of Physical Chemistry C

Volumn 116, Issue 11, 2012, Pages 6615-6622

  Shah, G Ali ^a   Radny, Marian W ^a,b   Smith, Phillip V ^a   Schofield, Steven R ^c  

^a UNIVERSITY OF NEWCASTLE   (Australia)

^b POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ASSOCIATED ELECTRONICS; BULK ELECTRONS; BULK STATE; CL ATOMS; DENSITY FUNCTIONAL THEORY CALCULATIONS; H-TERMINATED SURFACE; NUMBER OF LAYERS; QUANTUM CONFINEMENT EFFECTS; RECONSTRUCTED SURFACES; SI(0 0 1); SI(001) SURFACES; SLAB THICKNESS; SURFACE ELECTRONIC PROPERTIES; THIN SLAB; THIN-FILM TECHNOLOGY;

ELECTRONIC STRUCTURE; FERMI LEVEL; PLASMA CONFINEMENT; SILICON; SLAB MILLS;

GERMANIUM;

EID: 84863421466     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp208247m     Document Type: Article

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