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Physical Review Letters

Volumn 100, Issue 24, 2008, Pages

Valence surface electronic states on Ge(001)

(5) Radny, M W a Shah, G A a Schofield, S R a,b Smith, P V a Curson, N J b

a UNIVERSITY OF NEWCASTLE (Australia)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PROPERTIES; ELECTRIC CURRENTS; ELECTRONIC STATES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; EXCAVATION; GERMANIUM; IMAGING TECHNIQUES; MICROSCOPIC EXAMINATION; PROBABILITY DENSITY FUNCTION; SCANNING; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; SURFACE PROPERTIES; SURFACES; TUNNELING (EXCAVATION);

(1 1 0) SURFACE; (PL) PROPERTIES; AMERICAN PHYSICAL SOCIETY (APS); DENSITY-FUNCTIONAL (DF); OPTICAL (PET) (OPET); SEMI CONDUCTOR SURFACES; SI(0 0 1); SURFACE ELECTRONIC STATES; SURFACE STATES; TUNNELING SPECTROSCOPY;

DENSITY FUNCTIONAL THEORY;

EID: 45749144768 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.100.246807 Document Type: Article

Times cited : (36)

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