Appearance of direct gap in silicon and germanium nanosize slabs

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 61-63

  Kholod, A N ^a,b   Borisenko, V E ^a   Saul A ^b   Arnaud d'Avitaya, F ^b   Fuhr, J ^c  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b Ctr Rech sur les Mecanismes C   (France)

^c CENTRO ATÓMICO BARILOCHE   (Argentina)

Author keywords

Band structure; Germanium; Nanosize slabs; Silicon

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; MOLECULAR ORIENTATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

NANOSIZE SLABS;

OPTICAL MATERIALS;

EID: 0035361635     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00075-1     Document Type: Conference Paper

References (7)

1. WIEN97, Vienna University of Technology, Vienna, 1997