Impact of quantum confinement on subthreshold swing and electrostatic integrity of ultra-thin-body GeOI and InGaAs-OI n-MOSFETs

IEEE Transactions on Nanotechnology

Volumn 11, Issue 2, 2012, Pages 287-291

  Yu, Chang Hung ^a   Wu, Yu Sheng ^a   Hu, Vita Pi Ho ^a   Su, Pin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Electrostatic integrity (EI); germanium on insulator (GeOI); InGaAs OI; quantum confinement (QC); subthreshold swing (SS); ultra thin body (UTB)

Indexed keywords

ELECTROSTATIC INTEGRITY; GERMANIUM-ON-INSULATOR; INGAAS-OI; SUBTHRESHOLD SWING; ULTRA-THIN-BODY;

CARRIER MOBILITY; ELECTROSTATICS; GERMANIUM; MOSFET DEVICES; SEMICONDUCTING INDIUM;

QUANTUM CONFINEMENT;

EID: 84863365763     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2169084     Document Type: Article

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