Design and characterization of plasmonic terahertz wave detectors based on silicon field-effect transistors

Japanese Journal of Applied Physics

Volumn 51, Issue 6 PART 2, 2012, Pages

  Hwang, Hee Cheol ^a   Park, Kibog ^a   Park, Wook Ki ^b   Han, Seong Tae ^b   Kim, Kyung Rok ^a  

^a Ulsan National Institute of Science and Technology   (South Korea)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; DESIGN SPECIFICATION; DETECTION SIGNAL; DIELECTRIC THICKNESS; DIRECT-CURRENT; DRAIN-TO-SOURCE VOLTAGES; FREQUENCY REGIMES; GATE LENGTH; MODELING AND SIMULATION; NOISE EQUIVALENT POWER; NON-RESONANT DETECTION; NONRESONANT; PERFORMANCE METRICS; PHOTO-INDUCED; PHYSICAL DESIGN; PLASMONIC; RESPONSIVITY; STRUCTURAL PARAMETER; TERAHERTZ DETECTORS; THZ DETECTORS; THZ WAVES; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

COMPUTER SIMULATION; DC POWER TRANSMISSION; DESIGN; DETECTORS; DRAIN CURRENT; ELECTRON GAS; FIELD EFFECT TRANSISTORS; PLASMONS; SIGNAL DETECTION; SILICON; TERAHERTZ WAVES;

TERAHERTZ WAVE DETECTORS;

EID: 84863333918     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.06FE17     Document Type: Article

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