Analysis of tunneling-injection transit-time effects and self-excitation of terahertz plasma oscillations in high-electron-mobility transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 8 B, 2002, Pages

  Ryzhii, Victor ^a,b   Shur, Michael ^a,b  

^a UNIVERSITY OF AIZU   (Japan)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

High electron mobility transistor; Plasma oscillations; Transit time effects; Tunneling injection

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); PLASMA OSCILLATIONS; RESONANCE; TRANSIT TIME DEVICES;

PLASMA RESONANCES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037104515     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l922     Document Type: Article

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