Modulating dopant segregation in floating-zone silicon growth in magnetic fields using rotation

Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 381-387

  Lan, C W ^a   Liang, M C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Floating zone; Magnetic field; Rotation; Segregation; Silicon; Simulation

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FINITE VOLUME METHOD; FLOW PATTERNS; HEAT CONVECTION; MAGNETIC FIELD EFFECTS; MASS TRANSFER; MIXING; PHASE INTERFACES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DOPANT SEGREGATION EFFECTS; FLOATING ZONE GROWTH; NEWTON METHOD; ROTATING MAGNETIC FIELDS;

SEMICONDUCTING SILICON;

EID: 0031244748     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00264-9     Document Type: Article

References (9)

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8. C.W Lan, Effect of axisymmetric magnetic fields on heat flow and interfaces in floating-zone silicon crystal growth, Int. J. Heat Mass Transfer, submitted.
9. C.W. Lan, Int. J. Numer. Meth. Fluids 19 (1994) 19.