Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection

Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 450-460

  Assaker, R ^a   Van Den Bogaert, N ^a   Dupret, F ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Convection; Czochralski growth; Melt flow; Modelling (dynamic, global); Numerical simulation; Silicon; Turbulence

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; HEAT CONVECTION; MATHEMATICAL MODELS; MIXING; TURBULENCE;

OSCILLATORY FLOWS; TIME DEPENDENT SIMULATIONS;

SEMICONDUCTING SILICON;

EID: 0031247039     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(97)00240-6     Document Type: Article

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