Electronic state formation by surface atom removal on a MoS 2 surface

Japanese Journal of Applied Physics

Volumn 51, Issue 6 PART 2, 2012, Pages

  Kodama, Nagisa ^a   Hasegawa, Tsuyoshi ^a,b   Tsuruoka, Tohru ^a,b   Joachim, Christian ^c   Aono, Masakazu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP REGION; CURRENT VOLTAGE; ELECTRICAL FIELD; REMOVAL OF SULFUR; SCANNING TUNNELING MICROSCOPES; SCANNING TUNNELING SPECTROSCOPY; SEMICONDUCTING MATERIALS; STEPWISE INCREASE; SULFUR ATOMS; SURFACE ATOMS;

ATOMS; ELECTRONIC STATES; ENERGY GAP; MOLYBDENUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SULFUR;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84863310358     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.06FF07     Document Type: Article

References (30)

1. K. K. Kam and B. A. Parkinson: J. Phys. Chem. 86 (1982) 463.
2. Th. Böker, R. Severin, A. Mü ller, C. Janowitz, and R. Manzke: Phys. Rev. B 64 (2001) 235305.
3. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis: Nat. Nanotchnol. 6 (2011) 147.
4. B. Radisavljevis, M. B. Whitwick, and A. Kis: ACS Nano 5 (2011) 9934.
5. K. Novoselov, A. Geim, S. Morozov, D. Jiang, Y. Zhang, S. Dubonos, I. Grigorieva, and A. Firsov: Science 306 (2004) 666.
6. F. Schwierz: Nat. Nanotechnol. 5 (2010) 487.
7. M. S. Fuhrer, C. N. Lau, and A. H. MacDonald: MRS Bull. 35 (2010) 289.
8. K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li: Nano Lett. 12 (2012) 1538.
9. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz: Phys. Rev. Lett. 105 (2010) 136805.
10. A. Ramasubramaniam, D. Naveh, and E. Towe: Phys. Rev. B 84 (2011) 205325.
11. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang: ACS Nano 6 (2012) 74.
12. K. S. Yong, D. M. Otalvaro, I. Duchemin, M. Saeys, and C. Joachim: Phys. Rev. B 77 (2008) 205429.
13. S. Hosoki, S. Hosaka, and T. Hasegawa: Appl. Surf. Sci. 60-61 (1992) 643.
14. S. Hosoki and T. Hasegawa: Oyo Buturi 62 (1993) 155 [in Japanese].
15. K. Hirose and M. Tsukada: Phys. Rev. Lett. 73 (1994) 150.
16. M. Sakurai, C. Thirstrup, T. Nakayama, and M. Aono: Appl. Surf. Sci. 121-122 (1997) 107.
17. B. Weber, S. Mahapatra, H. Ryu, S. Lee, A. Fuhrer, T. C. G. Reusch, D. L. Thompson, W. C. T. Lee, G. Klimeck, L. C. L. Hollenberg, and M. Y. Simmons: Science 335 (2012) 64.
18. M. Fuechsle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L. C. L. Hollenberg, G. Klimeck, and M. Y. Simmons: Nat. Nanotechnol. 7 (2012) 242.
19. N. Kodama, T. Hasegawa, Y. Okawa, T. Tsuruoka, C. Joachim, and M. Aono: Jpn. J. Appl. Phys. 49 (2010) 08LB01.
20. N. Ikarashi, K. Kobayashi, T. Hasegawa, and K. Yagi: Jpn. J. Appl. Phys. 27 (1988) L750.
21. G. Honjo, K. Takayanagi, K. Kobayashi, and K. Yagi: Phys. Status Solidi A 55 (1979) 353.
22. J. Yang, J. Deng, N. Chandrasekhar, and C. Joachim: J. Vac. Sci. Technol. B 25 (2007) 1694.
23. C. Joachim, D. Martrou, M. Rezeq, C. Troadec, D. Jie, N. Chandrasekhar, and S. Gauthier: J. Phys.: Condens. Matter 22 (2010) 084025.
24. J. Tersoff and D. R. Hamann: Phys. Rev. B 31 (1985) 805.
25. N. Garcia: IBM J. Res. Dev. 30 (1986) 533.
26. R. M. Tromp: J. Phys.: Condens. Matter 1 (1989) 10211.
27. M. Weimer, J. Kramar, C. Bai, and J. D. Baldeschwieler: Phys. Rev. B 37 (1988) 4292.
28. A. J. Melmed: J. Vac. Sci. Technol. B 9 (1991) 601.
29. C. Kittel: Introduction to Solid State Physics (Wiley, New York, 1976).
30. A. A. Abass and N. H. Ahmad: J. Phys. Chem. Solids 47 (1986) 143.