High-performance field-effect transistor based on dibenzo[d,d′] thieno[3,2-b;4,5-6′]dithiophene, an easily synthesized semiconductor with high ionization potential

Advanced Materials

Volumn 19, Issue 19, 2007, Pages 3008-3011

  Gao, Jianhua ^a,b   Li, Rongjin ^a,b   Li, Qiang ^a,b   Meng, Qing ^a,b   Jiang, Hui ^a   Li, Hongxiang ^a   Hu, Wenping ^a  

^a INSTITUTE OF CHEMISTRY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BYPRODUCTS; IONIZATION; MASS SPECTROMETRY; PETROLEUM INDUSTRY; PURIFICATION; THERMOGRAVIMETRIC ANALYSIS; THIOPHENE;

BENZO{B}THIOPHENE; ELEMENTARY ANALYSIS; OPTICAL BANDGAP;

FIELD EFFECT TRANSISTORS;

EID: 35348998520     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200701167     Document Type: Article

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