Formation of carriers in Ti-oxide thin films by substitution reactions

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Liu, Y S ^a   Lin, Y H ^a   Wei, Y S ^a   Liu, C Y ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; ANNEALING TIME; CONDUCTION CARRIERS; CORE-LEVEL PEAKS; HALL MEASUREMENTS; POST ANNEALING; SUBSTITUTION MECHANISMS; TIO; VACANCY CONCENTRATION; X RAY PHOTOELECTRON SPECTROSCOPIES (XPS); XPS SPECTRA;

ANNEALING; CARRIER CONCENTRATION; CORE LEVELS; CURVE FITTING; SUBSTITUTION REACTIONS; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 84863268636     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3685448     Document Type: Article

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