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Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

Room temperature ferromagnetism in Cr-doped hydrogenated amorphous Si films

(3) Yao, Jia Hsien a Lin, Hsiu Hau a,b Chin, Tsung Shune c,d

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL CENTER FOR THEORETICAL SCIENCES (Taiwan)

c FENG CHIA UNIVERSITY (Taiwan)

d NATIONAL APPLIED RESEARCH LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CHROMIUM; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FERROMAGNETISM; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HYDROGENATION; HYDROGENOLYSIS; MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; MAGNETIC THIN FILMS; MAGNETISM; MAGNETRON SPUTTERING; METAL ANALYSIS; POLARONS; SILICON; THERMOELECTRICITY; THICK FILMS; THIN FILMS;

(PL) PROPERTIES; AMERICAN INSTITUTE OF PHYSICS (AIP); AMORPHOUS SI FILMS; ANOMALOUS HALL EFFECT (AHE); CARRIER (CO); CONCENTRATION (COMPOSITION); CR-DOPED; ELECTRICAL CONDUCTIVITY; EXPERIMENTAL RESULTS; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; MAGNETIC (CE); MAGNETIC POLARONS; MAGNETIZATION CURVES; RF MAGNETRON SPUTTERING; ROOM TEMPERATURE (RT) FERROMAGNETISM; ROOM-TEMPERATURE (RT); SOLUBILITY LIMITS; STRUCTURE ANALYSIS;

AMORPHOUS FILMS;

EID: 45749117955 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2946662 Document Type: Article

Times cited : (15)

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