Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K

Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

  Yao, Jia Hsien ^a   Li, Shin Chih ^a   Lan, Ming Der ^b   Chin, Tsung Shune ^a,c,d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

^d NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CURVE FITTING; ELECTRIC PROPERTIES; FERROMAGNETISM; GYRATORS; HALL EFFECT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; HYDROGENATION; LAWS AND LEGISLATION; MAGNETIC FIELD EFFECTS; MANGANESE; MANGANESE COMPOUNDS; METALLIC FILMS; SATURATION MAGNETIZATION; SPIN WAVES; THREE DIMENSIONAL; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SI; AMORPHOUS SILICON FILMS; ANOMALOUS HALL EFFECTS; CURIE-WEISS LAWS; ELECTRICAL PROPERTIES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; MN-DOPED; ROOM TEMPERATURES; SPIN-WAVE; X- RAY DIFFRACTIONS;

AMORPHOUS FILMS;

EID: 60749107302     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089247     Document Type: Article

References (16)

1. H. Ohno, Science 0036-8075 10.1126/science.1058371 291, 840 (2001).
2. Y. D. Park, A. T. Hanbicki, S. C. Erwin, C. S. Hellberg, J. M. Sullivan, J. E. Mattson, T. F. Ambrose, A. Wilson, G. Spanos, and B. T. Jonker, Science 0036-8075 10.1126/science.1066348 295, 651 (2002).
3. S. Cho, S. Choi, S. C. Hong, Y. Kim, J. B. Ketterson, B. -J. Kim, and Y. C. Kim, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.033303 66, 033303 (2002).
4. A. P. Li, J. Shen, J. R. Thompson, and H. H. Weitering, Appl. Phys. Lett. 0003-6951 10.1063/1.1899768 86, 152507 (2005).
5. A. Verna, L. Ottaviano, M. Passacaantando, S. Santucci, P. Picozzi, F. D'Orazio, and F. Lucari, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.085204 74, 085204 (2006).
6. H. -M. Kim and N. M. Kim, Chem. Mater. 0897-4756 10.1021/cm034534l 15, 3964 (2003).
7. F. M. Zhang, X. C. Liu, J. Gao, X. S. Wu, and Y. W. Du, Appl. Phys. Lett. 0003-6951 10.1063/1.1775886 85, 786 (2004).
8. X. C. Liu, Z. H. Lu, Z. L. Lu, L. Y. Lv, X. S. Wu, F. M. Zhang, and Y. W. Du, J. Appl. Phys. 0021-8979 10.1063/1.2355369 100, 073903 (2006).
9. R. C. Chittick, J. H. Alexander, and H. F. Sterling, J. Electrochem. Soc. 0013-4651 10.1149/1.2411779 116, 77 (1969).
10. K. H. Baik, R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, J. Kelly, R. Rairigh, A. F. Hebard, W. Tang, M. Stavola, and J. M. Zavada, Appl. Phys. Lett. 0003-6951 10.1063/1.1637151 83, 5458 (2003).
11. J. H. Yao, H. -H. Lin, and T. S. Chin, Appl. Phys. Lett. 0003-6951 10.1063/1.2946662 92, 242501 (2008).
12. H. -J. Lee, C. H. Park, S. Y. Jeong, K. J. Yee, C. R. Cho, M. H. Jung, and D. J. Chadi, Appl. Phys. Lett. 0003-6951 10.1063/1.2171789 88, 062504 (2006).
13. S. T. B. Goennenwein, T. A. Wassner, H. Huebl, M. S. Brandt, J. B. Philipp, M. Opel, R. Gross, A. Koeder, W. Schoch, and A. Waag, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.227202 92, 227202 (2004).
14. X. C. Liu, Y. B. Lin, J. F. Wang, Z. H. Lu, Z. L. Lu, J. P. Xu, L. Y. Lv, F. M. Zhang, and Y. W. Du, J. Appl. Phys. 0021-8979 10.1063/1.2763969 102, 033902 (2007).
15. J. C. A. Huang, H. S. Hsu, Y. M. Hu, C. H. Lee, Y. H. Huang, and M. Z. Lin, Appl. Phys. Lett. 0003-6951 10.1063/1.1812844 85, 3815 (2004).
16. S. H. Liu, H. S. Hsu, C. R. Lin, C. S. Lue, and J. C. A. Huang, Appl. Phys. Lett. 0003-6951 10.1063/1.2745642 90, 222505 (2007).