Polarized Raman spectroscopy of multilayer Ge/Si(001) quantum dot heterostructures

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2857-2863

  Baranov, A V ^a   Fedorov, A V ^a   Perova, T S ^b   Moore, R A ^b   Solosin, S ^b   Yam, V ^c   Bouchier, D ^c   Le Thanh, V ^d  

^a VAVILOV STATE OPTICAL INSTITUTE   (Russian Federation)

^b TRINITY COLLEGE DUBLIN   (Ireland)

^c UNIVERSITÉ PARIS SACLAY   (France)

^d CRMC2 CNRS Campus de Luminy   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BACKSCATTERING; COMPRESSIVE STRESS; GERMANIUM; HIGH ENERGY ELECTRON DIFFRACTION; LIGHT POLARIZATION; MULTILAYERS; NANOSTRUCTURED MATERIALS; PHONONS; PRESSURE EFFECTS; RAMAN SPECTROSCOPY; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON;

ANISOTROPIC INTERMIXING; POLARIZED RAMAN SPECTROSCOPY; POWER DENSITY; STRANSKI-KRASTANOV (SK) GROWTH METHOD;

HETEROJUNCTIONS;

EID: 5044233040     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1776314     Document Type: Article

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