A high mobility C 60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

Chinese Physics B

Volumn 21, Issue 2, 2012, Pages

  Zhou, Jian Lin ^a,b   Yu, Jun Sheng ^a   Yu, Xin Ge ^a   Cai, Xin Yang ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b CHONGQING UNIVERSITY   (China)

Author keywords

Bphen; C 60; organic field effect transistors; passivation layer

Indexed keywords

AG ELECTRODE; BI-LAYER; BPHEN; C 60; CONTACT BARRIER; CRYSTALLINITIES; HIGH MOBILITY; LARGE-GRAIN; METHYL METHACRYLATES; PASSIVATION LAYER; PENTACENES; ULTRA-THIN; X-RAY DIFFRACTION TECHNIQUES;

ATOMIC FORCE MICROSCOPY; ELECTRODES; ELECTRON MOBILITY; ESTERS; FIELD EFFECT TRANSISTORS; FILM GROWTH; PASSIVATION; X RAY DIFFRACTION;

SILVER;

EID: 84863160773     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/21/2/027305     Document Type: Article

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