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Volumn 24, Issue 8, 2012, Pages 1106-1110

Direct observations of retention failure in ferroelectric memories

(11) Gao, Peng a Nelson, Christopher T a Jokisaari, Jacob R a Zhang, Yi a,b Baek, Seung Hyub c Bark, Chung Wung c Wang, Enge d Liu, Yuanming e Li, Jiangyu e Eom, Chang Beom c Pan, Xiaoqing a

a UNIVERSITY OF MICHIGAN (United States)

b NANJING UNIVERSITY (China)

c UNIVERSITY OF WISCONSIN MADISON (United States)

d PEKING UNIVERSITY (China)

e University of Washington (United States)

Author keywords

data retention failure; ferroelectrics; polarization switching; transmission electron microscopy

Indexed keywords

FERROELECTRIC MEMORY; FERROELECTRIC RANDOM ACCESS MEMORIES; HIGH ENERGY; NON-VOLATILE; POLAR STATE; POLARIZATION SWITCHING; RETENTION LOSS; TRANSMISSION ELECTRON;

ELECTRIC FIELDS; FERROELECTRIC THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

FERROELECTRIC MATERIALS;

LEAD; OXIDE; TITANIUM; ZIRCONIUM;

ARTICLE; CHEMISTRY; ELECTRICAL EQUIPMENT;

ELECTRICAL EQUIPMENT AND SUPPLIES; LEAD; OXIDES; TITANIUM; ZIRCONIUM;

EID: 84863160148 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201103983 Document Type: Article

Times cited : (63)

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