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Electrochemical and Solid-State Letters

Volumn 15, Issue 4, 2012, Pages

Study on the resistance drift in amorphous Ge 2Sb 2Te 5 according to defect annihilation and stress relaxation

(4) Cho, Ju Young a Yang, Tae Youl a Park, Yong Jin a Joo, Young Chang a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDE GLASS; DEFECT ANNIHILATION; ELECTRICAL RESISTANCE MEASUREMENT; MECHANICAL STRESS; PHASE-CHANGE RANDOM ACCESS MEMORY; POWER-LAW RELATIONSHIP; TIME DEPENDENCE; TIME-DEPENDENT;

GERMANIUM; PHASE CHANGE MEMORY;

STRESS RELAXATION;

EID: 84863122931 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.001204esl Document Type: Article

Times cited : (17)

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