Preparation and properties of de-sputtered IrO2 and Ir thin films for oxygen barrier applications in advanced memory technology

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1857-1865

  Pinnow, C U ^a   Kasko, I ^a   Dehm, C ^a   Jobst, B ^b   Seibt, M ^c   Geyer, U ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b SIEMENS AG   (Germany)

^c UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPRESSIVE STRESS; DYNAMIC RANDOM ACCESS STORAGE; HIGH TEMPERATURE APPLICATIONS; IRIDIUM COMPOUNDS; METALLOGRAPHIC MICROSTRUCTURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTER DEPOSITION; STRESS ANALYSIS; STRESS RELAXATION; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

OXYGEN BARRIERS;

METALLIC FILMS;

EID: 0035440735     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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