Beyond CMOS: Logic suitability of InGaAs HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 51-54

  Del Alamo, Jesús A ^a   Kim, Dae Hyun ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER UTILIZATION; MICROELECTRONICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSPORT PROPERTIES;

CHANNEL MATERIALS; CHIP DENSITY; LOGIC SUITABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748837838     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381120     Document Type: Conference Paper

References (10)

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4. M. L. Lee and E. A. Fitzgerald, 2003 IEDM, p. 429.
5. D.-H. Kim et al., 2005 IEDM, p. 837.
6. D.-H. Kim et al., 2006 IPRM, p. 177.
7. D.-H. Kim and J. A. del Alamo, 2006 CS-MANTECH, p. 251.
8. D.-H. Kim and J. A. del Alamo, 2006 IEDM, p. 837.
9. K. Shinohara et al., 2004 IPRM, p. 721.
10. C.-H. Jan et al., IEDM 2005, p. 65.