Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Applied Physics Letters

Volumn 100, Issue 5, 2012, Pages

  Chen, J C H ^a   Wang, D Q ^a   Klochan, O ^a   Micolich, A P ^a   Das Gupta, K ^b,d   Sfigakis, F ^b   Ritchie, D A ^b   Reuter, D ^c   Wieck, A D ^c   Hamilton, A R ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c RUHR UNIVERSITY BOCHUM   (Germany)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAAS/GAAS; AMBIPOLAR DEVICES; CONDUCTION CHANNEL; GATE BIAS; HETEROSTRUCTURE DEVICES; HOLE SCATTERING; SCATTERING MECHANISMS;

PHYSICAL PROPERTIES; PHYSICS;

HETEROJUNCTIONS;

EID: 84863012722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3673837     Document Type: Article

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