Fabrication of high-quality one-and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2328-2330

  Harrell, R H ^a   Pyshkin, K S ^a   Simmons, M Y ^a   Ritchie, D A ^a   Ford, C J B ^a   Jones, G A C ^a   Pepper, M ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH-MOBILITY ELECTRON GASES; REMOTE IONIZED IMPURITY SCATTERING; TWO-DIMENSIONAL ELECTRON GASES;

HETEROJUNCTIONS;

EID: 0032607206     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123840     Document Type: Article

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